* Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A
* Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A
* High performance trench technology for extremely low rD.
and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.
A.
This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching perfo.
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